■ 제품필수정보
제조사 |
Infineon |
제조사품명 |
IPN50R650CEATMA1 |
간략설명 |
N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 Infineon IPN50R650CEATMA1 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 550 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 650 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 5 W Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 0.84V Infineon CoolMOS??CE Power MOSFET