■ 제품필수정보

제조사	Vishay
제조사품명	SI2365EDS-T1-GE3
간략설명	P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Vishay SI2365EDS-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 4.7 A Maximum Drain Source Voltage = 20 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 67.5 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 1.7 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V Width = 1.4mm
높이 = 1.02mm P-Channel MOSFET, 8V to 20V, Vishay Semiconductor