■ 제품필수정보

제조사	Vishay
제조사품명	SIHFBC30AS-GE3
간략설명	N-Channel MOSFET, 3.6 A, 600 V, 3-Pin D2PAK Vishay SIHFBC30AS-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.6 A Maximum Drain Source Voltage = 600 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.2 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 74 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C
높이 = 4.83mm N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor