■ 제품필수정보

제조사	Vishay
제조사품명	SIHF634S-GE3
간략설명	N-Channel MOSFET, 8.1 A, 250 V, 3-Pin D2PAK Vishay SIHF634S-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8.1 A Maximum Drain Source Voltage = 250 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 450 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 74 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 9.65mm
높이 = 4.83mm N-Channel MOSFET, 200V to 250V, Vishay Semiconductor