■ 제품필수정보

제조사	Infineon
제조사품명	BSZ060NE2LSATMA1
간략설명	N-Channel MOSFET, 40 A, 25 V, 8-Pin TSDSON Infineon BSZ060NE2LSATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 25 V
패키지 = TSDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 8.1 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 26 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 3.4mm
높이 = 1.1mm Infineon OptiMOS??Power MOSFET Family. OptiMOS??products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on)