■ 제품필수정보

제조사	Infineon
제조사품명	BSD235NH6327XTSA1
간략설명	Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235NH6327XTSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 950 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 600 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.2V Minimum Gate Threshold Voltage = 0.7V Maximum Power Dissipation = 500 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -12 V, +12 V Width = 1.25mm
높이 = 0.8mm Infineon OptiMOS?? Power MOSFET Family. Infineon ??s OptiMOS?? N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.