■ 제품필수정보

제조사	Vishay
제조사품명	SI4900DY-T1-GE3
간략설명	Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4.3 A Maximum Drain Source Voltage = 60 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 58 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Width = 4mm
높이 = 1.55mm Dual N-Channel MOSFET, Vishay Semiconductor