■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STI28N60M2
간략설명	N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK STMicroelectronics STI28N60M2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 650 V
패키지 = D2PAK (TO-263)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 150 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 170 W Transistor Configuration = Single Maximum Gate Source Voltage = +25 V Width = 4.6mm
높이 = 9.3mm These devices are N-channel Power MOSFETs developed using MDmesh??M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.Extremely low gate charge Excellent output capacitance (COSS ) profile 100% avalanche tested Zener-protected Extremely low Qg for increased efficiency Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)