■ 제품필수정보

제조사	Wolfspeed
제조사품명	CAS120M12BM2
간략설명	Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 193 A Maximum Drain Source Voltage = 1200 V
패키지 = Half Bridge
장착형태 = Screw Mount
핀수 = 7 Maximum Drain Source Resistance = 30 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.6V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 925 W Transistor Configuration =
시리즈 Maximum Gate Source Voltage = -10 V, +25 V Width = 61.4mm Forward Diode Voltage = 2.4V Wolfspeed Silicon Carbide Power MOSFET Modules. Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS ; SMPS, motor drives and battery chargers. MOSFET turn-off tail current and diode reverse recovery current are effectively zero. Ultra low loss high-frequency operation Ease of paralleling due to SiC characteristics Normally-off, fail-safe operation Copper baseplate and aluminium nitride insulator reduce thermal requirements