■ 제품필수정보

제조사	Nexperia
제조사품명	PMCM4401VNEAZ
간략설명	N-Channel MOSFET, 6 A, 12 V, 4-Pin WLCSP Nexperia PMCM4401VNEAZ

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 12 V
패키지 = WLCSP
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 120 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 12.5 W Transistor Configuration = Single Maximum Gate Source Voltage = 8 V Typical Gate Charge @ Vgs = 6 nC @ 10 V
높이 = 0.16mm N-channel MOSFETs ??20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.12V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits