■ 제품필수정보
제조사 |
Nexperia |
제조사품명 |
PSMN3R5-30YL,115 |
간략설명 |
N-Channel MOSFET, 100 A, 30 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN3R5-30YL,115 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 100 A Maximum Drain Source Voltage = 30 V
패키지 = LFPAK, SOT-669
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 6 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.45V Minimum Gate Threshold Voltage = 0.65V Maximum Power Dissipation = 74 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 4.1mm
최소 작동 온도 = -55 °C N-channel MOSFETs 25 V - 30 V, Robust performance thanks to advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.N-channel 30 V 3.5 m??logic level MOSFET in LFPAK, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources Class-D amplifiers DC-to-DC converters Motor control Server power supplies