■ 제품필수정보

제조사	Nexperia
제조사품명	PMDXB950UPEZ
간략설명	Dual P-Channel MOSFET, 500 mA, -20 V, 8-Pin DFN1010B-6 Nexperia PMDXB950UPEZ

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 500 mA Maximum Drain Source Voltage = -20 V
패키지 = DFN1010B-6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 3.5 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = -0.95V Minimum Gate Threshold Voltage = -0.45V Maximum Power Dissipation = 4025 mW Maximum Gate Source Voltage = 8 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C P-channel MOSFETs, The perfect fit for your design when N-channels simply aren??t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia??s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection > 1 kV HBM Drain-source on-state resistance RDSon = 1.02 Ω Relay driver High-speed line driver High-side load switch Switching circuits