■ 제품필수정보

제조사	Nexperia
제조사품명	PMV280ENEAR
간략설명	N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-23 Nexperia PMV280ENEAR

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1 A Maximum Drain Source Voltage = 100 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 892 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.7V Minimum Gate Threshold Voltage = 1.3V Maximum Power Dissipation = 5 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Length = 3mm
높이 = 1mm N-channel MOSFETs 75 V - 200 V, You have now entered one of the worlds foremost standard MOS portfolios, Looking for high-reliability MOSFETs in the 75 V to 200 V range that simplify design-in? Our devices are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA). For example, our LFPAK power MOSFET range boasts ultra-low RDSon, high-speed switching and voltage ratings up to 200 V.100 V N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver Low-side loadswitch Switching circuits