■ 제품필수정보

제조사	Nexperia
제조사품명	PMV28UNEAR
간략설명	N-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 Nexperia PMV28UNEAR

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4.7 A Maximum Drain Source Voltage = 20 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 70 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 0.45V Maximum Power Dissipation = 3.9 W Transistor Configuration = Single Maximum Gate Source Voltage = 8 V Width = 1.4mm
높이 = 1mm Automotive MOSFETs, The worlds largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia power semiconductors can provide the answer to many automotive system power problems.AEC-Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175°C rating20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified