■ 제품필수정보

제조사	Wolfspeed
제조사품명	C3M0120100J
간략설명	SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0120100J

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 22 A Maximum Drain Source Voltage = 1000 V
패키지 = TO-263-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 170 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = +15 V, +9 V
최대 작동 온도 = +150 °C
시리즈 = C3M Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry??s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.Minimum of 1kV Vbr across entire operating temperature range low source inductance package with separate driver source pin High-speed switching with low output capacitance High blocking voltage with low RDS(on) Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive