■ 제품필수정보

제조사	ROHM
제조사품명	SCT2H12NYTB
간략설명	SiC N-Channel MOSFET, 4 A, 1700 V, 3-Pin TO-268 ROHM SCT2H12NYTB

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4 A Maximum Drain Source Voltage = 1700 V
패키지 = TO-268
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.71 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 1.6V Maximum Power Dissipation = 44 W Transistor Configuration = Single Maximum Gate Source Voltage = 22 V Width = 13.9mm
높이 = 5mm Low on-resistance Fast switching speed Long creepage distance with no center lead Simple to drive Pb-free lead plating, RoHS compliant