■ 제품필수정보

제조사	Vishay
제조사품명	SQD19P06-60L_GE3
간략설명	P-Channel MOSFET, 11 A, 60 V, 3-Pin DPAK Vishay SQD19P06-60L_GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 11 A Maximum Drain Source Voltage = 60 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 46 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 6.22mm
높이 = 2.38mm P-Channel MOSFET, SQ Rugged
시리즈, Vishay Semiconductor