■ 제품필수정보

제조사	Vishay
제조사품명	SIHB30N60E-GE3
간략설명	N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK Vishay SIHB30N60E-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 29 A Maximum Drain Source Voltage = 600 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 125 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 250 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
시리즈 = E
시리즈 N-Channel MOSFET, E
시리즈, Low Figure-of-Merit, Vishay Semiconductor. The E
시리즈 Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses