■ 제품필수정보

제조사	Toshiba
제조사품명	TJ9A10M3,S4Q(M
간략설명	P-Channel MOSFET, 9 A, 100 V, 3-Pin TO-220SIS Toshiba TJ9A10M3,S4Q(M

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 100 V
패키지 = TO-220SIS
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 170 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 19 W Transistor Configuration = Single Maximum Gate Source Voltage = +20 V Typical Gate Charge @ Vgs = 47 @ -10 V nC Forward Diode Voltage = 1.4V MOSFET P-Channel, TJ9A
시리즈, Toshiba