■ 제품필수정보

제조사	Vishay
제조사품명	SI3493DDV-T1-GE3
간략설명	P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 8 A Maximum Drain Source Voltage = 20 V
패키지 = TSOP-6
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 51 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 3.6 W Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V Typical Gate Charge @ Vgs = 34.8 nC @ -8 V Forward Diode Voltage = 1.2V P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor