■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SUP50020E-GE3 |
| 간략설명 |
N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 120 A Maximum Drain Source Voltage = 60 V
패키지 = TO-220AB
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 2.8 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 375 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 4.65mm Forward Diode Voltage = 1.5V N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
