■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIRA90DP-T1-RE3 |
| 간략설명 |
N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA90DP-T1-RE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 100 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 1.15 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 0.8V Maximum Power Dissipation = 104 W Transistor Configuration = Single Maximum Gate Source Voltage = +20 V Width = 5.26mm
높이 = 1.12mm N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
