■ 제품필수정보

제조사	Infineon
제조사품명	IDH16G120C5XKSA1
간략설명	SiC Schottky Diode 1200V 16A TO-220-2

■ 제품사양

장착형태 = Through Hole
패키지 = TO-220 Maximum Continuous Forward Current = 40A Peak Reverse Repetitive Voltage = 1200V
다이오드 구성 = Single Diode
타입 = SiC Schottky
핀수 = 2 + Tab Maximum Forward Voltage Drop = 2.85V
칩당 요소 수 = 1 Diode Technology = SiC Schottky Peak Non-Repetitive Forward Surge Current = 140A thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon. The Infineon thinQ!??Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications. Reduced EMI