■ 제품필수정보

제조사	Toshiba
제조사품명	TK14G65W,RQ(S
간략설명	N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13.7 A Maximum Drain Source Voltage = 650 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 250 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 130 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Width = 8.8mm
높이 = 4.46mm MOSFET N-Channel, TK1x
시리즈, Toshiba