■ 제품필수정보

제조사	Toshiba
제조사품명	TK11P65W,RQ(S
간략설명	N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK Toshiba TK11P65W,RQ(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11.1 A Maximum Drain Source Voltage = 650 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 440 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 100 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Typical Gate Charge @ Vgs = 25 nC @ 10 V Forward Diode Voltage = 1.7V MOSFET N-Channel, TK1x
시리즈, Toshiba