■ 제품필수정보

제조사	Infineon
제조사품명	IPD80R1K4P7ATMA1
간략설명	N-Channel MOSFET, 4 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4P7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4 A Maximum Drain Source Voltage = 800 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.4 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 32 W Maximum Gate Source Voltage = -30 V, +30 V Width = 6.22mm
높이 = 2.41mm Infineon CoolMOS??P7 Power MOSFET. The 800V CoolMOS P7 Power MOSFET family establishes even higher efficiency and thermal performance. Suitable applications are power adapters, LED lighting, audio, industrial and auxiliary power.