■ 제품필수정보

제조사	Infineon
제조사품명	IPD60R800CEAUMA1
간략설명	N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 8.4 A Maximum Drain Source Voltage = 650 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 800 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 74 W Maximum Gate Source Voltage = -30 V, +30 V Width = 6.22mm
시리즈 = CoolMOS CE Infineon CoolMOS??CE Power MOSFET