■ 제품필수정보
제조사 |
IXYS |
제조사품명 |
IXTN200N10L2 |
간략설명 |
N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXYS IXTN200N10L2 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 178 A Maximum Drain Source Voltage = 100 V
패키지 = SOT-227
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 11 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 830 W Maximum Gate Source Voltage = -20 V, +20 V Width = 25.07mm
높이 = 9.6mm N-Channel Power MOSFET, IXYS Linear
시리즈. N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.