■ 제품필수정보

제조사	Wolfspeed
제조사품명	C3M0065100K
간략설명	SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 1000 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 90 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 1.8V Maximum Power Dissipation = 113.5 W Maximum Gate Source Voltage = -8 V, +19 V Transistor Material = SiC Forward Diode Voltage = 4.8V Silicon Carbide Power MOSFET, C3M
시리즈, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range New low-impedance package with driver source 8 mm of creepage/clearance between Drain and Source High-speed switching with low output capacitance High blocking voltage with low Drain-Source On-State Resistance Avalanche ruggedness Fast intrinsic diode with low Reverse Recovery