■ 제품필수정보

제조사	Toshiba
제조사품명	TK10A60W,S4VX(M
간략설명	N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.7 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220SIS
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 380 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.7V Minimum Gate Threshold Voltage = 2.7V Maximum Power Dissipation = 30 W Maximum Gate Source Voltage = -30 V, +30 V Typical Gate Charge @ Vgs = 20 nC @ 10 V
높이 = 15mm MOSFET N-Channel, TK1x
시리즈, Toshiba