■ 제품필수정보

제조사	Infineon
제조사품명	IPB180P04P4L02ATMA1
간략설명	P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 Infineon IPB180P04P4L02ATMA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 180 A Maximum Drain Source Voltage = 40 V
패키지 = D2PAK-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 3.9 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = -16 V, +16 V
칩당 요소 수 = 1
시리즈 = OptiMOS P Infineon OptiMOS??P P-Channel Power MOSFETs. The Infineon OptiMOS ??P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS??P-Channel
시리즈: Temperature range from -55°C to +175°C