■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG50T65HJU1 |
| 간략설명 | 535W 100A 650V TO-247 Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4.5V@1mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 4.82nF , Td(off) = 193ns , Gate Charge(Qg) = 158nC@15V , Switching Energy(Eoff) = 1mJ , Pulsed Current- Forward(Ifm) = 200A , Reverse Transfer Capacitance (Cres) = 37pF , Turn-On Energy (Eon) = 1.7mJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 82ns , Current - Collector(Ic) = 100A , Vce Saturation(VCE(sat)) = 1.8V@50A,15V , Pd - Power Dissipation = 535W , Td(on) = 52ns , Output Capacitance(Coes) = 170pF
