■ 제품필수정보
| 제조사 |
Bruckewell |
| 제조사품명 |
CMS120N080B |
| 간략설명 |
TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
■ 제품사양
타입 = 1 N-Channel , Configuration = - , Gate Threshold Voltage (Vgs(th)) = 4V , Gate Charge(Qg) = 61nC , Current - Continuous Drain(Id) = 35A , Drain to Source Voltage = 1.2kV , Pd - Power Dissipation = 188W , RDS(on) = 77mΩ@20V
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