■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG20T65FJS1 |
| 간략설명 | 53W 40A 650V TO-220F Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@1mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.7nF , Td(off) = 120ns , Gate Charge(Qg) = 21nC@15V , Switching Energy(Eoff) = 460uJ , Pulsed Current- Forward(Ifm) = 80A , Reverse Transfer Capacitance (Cres) = 13pF , Turn-On Energy (Eon) = 370uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 62ns , Current - Collector(Ic) = 40A , Vce Saturation(VCE(sat)) = 1.6V@20A,15V , Pd - Power Dissipation = 53W , Td(on) = 21ns , Output Capacitance(Coes) = 72pF
