■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG20T65PS1 |
| 간략설명 | 125W 40A 650V TO-220 Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.1V@250uA , Operating Temperature = -55℃~+150℃ , Input Capacitance(Cies) = 831pF , Td(off) = 71ns , Gate Charge(Qg) = 271nC , Switching Energy(Eoff) = 410uJ , Pulsed Current- Forward(Ifm) = 60A , Reverse Transfer Capacitance (Cres) = 7.5pF , Turn-On Energy (Eon) = 460uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 110ns , Current - Collector(Ic) = 40A , Vce Saturation(VCE(sat)) = 2.5V@20A,15V , Pd - Power Dissipation = 125W , Td(on) = 17ns , Output Capacitance(Coes) = 50pF
