■ 제품필수정보
| 제조사 | RENESAS |
|---|---|
| 제조사품명 | RBN40H125S1FPQ-A0#CB0 |
| 간략설명 | 319W 80A 1.25kV TO-247A IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 2.34V@15V,40A , Operating Temperature = - , Input Capacitance(Cies) = - , Td(off) = 124ns , Gate Charge(Qg) = 85nC , Switching Energy(Eoff) = 1.4mJ , Turn-On Energy (Eon) = 2mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.25kV , Reverse Recovery Time(trr) = 156ns , Current - Collector(Ic) = 80A , Pd - Power Dissipation = 319W , Td(on) = 25ns , IGBT
