■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IHW50N65R6XKSA1 |
| 간략설명 | 251W 100A 650V TO-247-3 Single IGBTs ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = - , Operating Temperature = -40℃~+175℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 261ns , Gate Charge(Qg) = 199nC , Switching Energy(Eoff) = 660uJ , Turn-On Energy (Eon) = 1.5mJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 108ns , Current - Collector(Ic) = 100A , Pd - Power Dissipation = 251W , Td(on) = 21ns , IGBT
