■ 제품필수정보
| 제조사 |
HUAYI |
| 제조사품명 |
HYG055N08NS1C2 |
| 간략설명 |
80V 85A 6mΩ@10V 83.3W 4V@250uA DFN-8(5.2x5.9) MOSFETs ROHS |
■ 제품사양
Operating Temperature = -55℃~+175℃ ,
타입 = N-Channel , Input Capacitance(Ciss) = 3.66nF , Gate Threshold Voltage (Vgs(th)) = 4V@250uA , Gate Charge(Qg) = 60nC@10V , Current - Continuous Drain(Id) = 85A , Reverse Transfer Capacitance (Crss@Vds) = 15pF , Drain to Source Voltage = 80V , Pd - Power Dissipation = 83.3W , Output Capacitance(Coss) = 1.54nF , RDS(on) = 6mΩ@10V
-
