■ 제품필수정보
| 제조사 |
HUAYI |
| 제조사품명 |
HYG110N11LS1C2 |
| 간략설명 |
115V 60A 19mΩ@4.5V 71.4W 3V@250uA PDFN-8(4.9x5.8) MOSFETs ROHS |
■ 제품사양
Operating Temperature = -55℃~+175℃ ,
타입 = N-Channel , Input Capacitance(Ciss) = 2.606nF , Gate Threshold Voltage (Vgs(th)) = 3V@250uA , Gate Charge(Qg) = 45.5nC@10V , Current - Continuous Drain(Id) = 60A , Reverse Transfer Capacitance (Crss@Vds) = 6.6pF , Drain to Source Voltage = 115V , Pd - Power Dissipation = 71.4W , RDS(on) = 19mΩ@4.5V
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