■ 제품필수정보
| 제조사 | Onsemi |
|---|---|
| 제조사품명 | HGTG5N120BND |
| 간략설명 | 167W 21A 1.2kV NPT (Non-Punch Through) TO-247 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = - , Operating Temperature = -55℃~+150℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 160ns , Gate Charge(Qg) = 53nC , Switching Energy(Eoff) = 390uJ , Turn-On Energy (Eon) = 450uJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Reverse Recovery Time(trr) = 65ns , Current - Collector(Ic) = 21A , Pd - Power Dissipation = 167W , Td(on) = 22ns , IGBT
