■ 제품필수정보
| 제조사 | NCE |
|---|---|
| 제조사품명 | NCE30TD60BF |
| 간략설명 | 35.5W 60A 600V TO-220F-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = - , Operating Temperature = -55℃~+150℃@(Tj) , Input Capacitance(Cies) = 3.552nF@25V , Td(off) = 166ns , Gate Charge(Qg) = 132nC@30A,15V , Switching Energy(Eoff) = 320uJ , Turn-On Energy (Eon) = 360uJ , Collector-Emitter Breakdown Voltage (Vces) = 600V , Reverse Recovery Time(trr) = 178ns , Current - Collector(Ic) = 60A , Vce Saturation(VCE(sat)) = 1.7V@30A,15V , Pd - Power Dissipation = 35.5W , Td(on) = 19ns , IGBT
