■ 제품필수정보
| 제조사 | MASPOWER |
|---|---|
| 제조사품명 | MSG50T65HHC0 |
| 간략설명 | 368W 100A 650V FS (Field Stop) TO-247 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4V@250uA , Operating Temperature = -55℃~+175℃ , Input Capacitance(Cies) = 3.33nF@25V , Td(off) = 140ns , Gate Charge(Qg) = 118nC@15V , Switching Energy(Eoff) = 1.53mJ , Turn-On Energy (Eon) = 650uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 125ns , Current - Collector(Ic) = 100A , Vce Saturation(VCE(sat)) = 2.2V@50A,15V , Pd - Power Dissipation = 368W , Td(on) = 33ns , IGBT
