■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKZA75N65EH7XKSA1 |
| 간략설명 | 338W 80A 650V TO-247-4 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 2.9V@0.66mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 3.886nF@25V , Td(off) = 199ns , Gate Charge(Qg) = 152nC@75A,15V , Switching Energy(Eoff) = 840uJ , Turn-On Energy (Eon) = 750uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 56ns , Current - Collector(Ic) = 80A , Vce Saturation(VCE(sat)) = 1.65V@75A,15V , Pd - Power Dissipation = 338W , Td(on) = 26ns , Voltage - Forward(Vf) = 1.65V@75A
