■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | FF200R12KT4 |
| 간략설명 | 1.1kW 320A 1.2kV IGBT Module Screw Terminals IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.8V@7.6mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 1.4nF@25V , Td(off) = - , Gate Charge(Qg) = - , Switching Energy(Eoff) = 14mJ , Turn-On Energy (Eon) = 10mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Reverse Recovery Time(trr) = - , Current - Collector(Ic) = 320A , Vce Saturation(VCE(sat)) = 1.75V@200A,15V , Pd - Power Dissipation = 1.1kW , Td(on) = 160ns , IGBT
