■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | FP50R12W2T7_B11 |
| 간략설명 | 50A 1.2kV Through Hole,62.8x56.7mm IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.15V@1.28mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 11.1nF@25V , Td(off) = 265ns , Switching Energy(Eoff) = 3.84mJ , Current - Collector(Ic) = 50A , Vce Saturation(VCE(sat)) = 1.5V@50A,15V , Td(on) = 51ns , Turn-On Energy (Eon) = 3.24mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Voltage - Forward(Vf) = 1.72V@50A
