■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IRGR3B60KD2TRP |
| 간략설명 | DPAK IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 3.5V@250uA , Operating Temperature = -55℃~+150℃ , Input Capacitance(Cies) = - , Td(off) = 110ns , Gate Charge(Qg) = 13nC@15V , Switching Energy(Eoff) = 39uJ , Turn-On Energy (Eon) = 62uJ , Collector-Emitter Breakdown Voltage (Vces) = - , Reverse Recovery Time(trr) = 77ns , Current - Collector(Ic) = - , Vce Saturation(VCE(sat)) = 2.4V@3A,15V , Pd - Power Dissipation = - , Td(on) = 18ns , IGBT
