■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IGD08N120S7ATMA1 |
| 간략설명 | 106W 24A 1.2kV TO-252-3 Single IGBTs ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.15V@0.16mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 1.3nF@25V , Td(off) = 149ns , Gate Charge(Qg) = 55nC@15V , Switching Energy(Eoff) = 410uJ , Current - Collector(Ic) = 24A , Vce Saturation(VCE(sat)) = 2V@8A,15V , Pd - Power Dissipation = 106W , Td(on) = 15ns , Turn-On Energy (Eon) = 460uJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV
