■ 제품필수정보
| 제조사 | Onsemi |
|---|---|
| 제조사품명 | FGB40T65SPD-F085 |
| 간략설명 | 267W 650V FS (Field Stop) D2PAK-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4V@40mA , Operating Temperature = -55℃~+175℃ , Input Capacitance(Cies) = 1.52nF@30V , Td(off) = 35ns , Gate Charge(Qg) = 36nC@40A,15V , Switching Energy(Eoff) = 280uJ , Turn-On Energy (Eon) = 970uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 206ns , Current - Collector(Ic) = - , Vce Saturation(VCE(sat)) = 2.4V@40A,15V , Pd - Power Dissipation = 267W , Td(on) = 18ns , IGBT
