■ 제품필수정보
| 제조사 | YANGJIE |
|---|---|
| 제조사품명 | MG50P12E1A |
| 간략설명 | 288W 50A 1.2kV E1A IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@1.7mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 2.6nF@25V , Td(off) = 160ns , Gate Charge(Qg) = 0.35uC , Switching Energy(Eoff) = 3.39mJ , Turn-On Energy (Eon) = 5.92mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Current - Collector(Ic) = 50A , Vce Saturation(VCE(sat)) = 1.9V@50A,15V , Pd - Power Dissipation = 288W , Td(on) = 41ns , Voltage - Forward(Vf) = 1.62V@50A
