■ 제품필수정보
| 제조사 | YANGJIE |
|---|---|
| 제조사품명 | MG25P12E1 |
| 간략설명 | 166W 25A 1.2kV Through Hole,107.5x45mm IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@1.2mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 1.45nF@25V , Td(off) = 104ns , Gate Charge(Qg) = 0.2uC , Switching Energy(Eoff) = 1.68mJ , Turn-On Energy (Eon) = 2.58mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Current - Collector(Ic) = 25A , Vce Saturation(VCE(sat)) = 1.9V@25A,15V , Pd - Power Dissipation = 166W , Td(on) = 16ns , Voltage - Forward(Vf) = 2V@25A
